Author: Andre Adrian
Version: 8.Aug.2013
The trade magazin High Frequency
Electronics did publish my article "A power MOSFET SPICE
model with built-in model generator" in the August 2013 version.
The article closes with the sentence "The LTSpice model files can
be found at http://www.andreadrian.de/pfpm". Welcome to this page!
The files are compressed into a ZIP file. The files are in the
folder pfpm_V1_2. Click on this pfpm_V1_2
link to down load the ZIP file.
The components of the radio frequency large-signal model use
SPICE standard components and hierarchical components (schematics).
The gate resistor Rg, the bond wire inductances Lg, Ld, Ls and the
capacitor Cgs are standard components. The component values can be
changed as usual. The capacities of Cds and Cgd are voltage
dependent. The body diode Dds has a strictly monotonic forward
current to forward voltage characteristics. The MOSFET component
realizes the transfer function and output function.

Figure 1 - Radio frequency SPICE model of a power MOSFET
The diode model is very simple. The backward current is always 0.
The forward voltage is not temperature dependent. Breakdown of the
diode is not simulated. If a power MOSFET is used in linear mode
as RF amplifier, soft-switching converter or RF oscillator the
body diode should not become active (have forward current). The
body diode model information is forwarded via parameters from the
PFPM schematic to the body diode schematic.

Figure 2 - SPICE model of the body diode
The SPICE component name is VDCAP for Voltage Dependent CAPacity.

The output function defines the direct current amplification of
the power MOSFET.

Version 1.1 of the oscillator circuit is presented. The
modifications are:

Figure 5 - Hartley (Huth Kühn) oscillator.